Reaction under vacancy-assisted diffusion at high quencher concentration

Fluorescence Quenching at High Quencher Concentrations

Vacancy-assisted diffusion in silicon: a three-temperature-regime model.

In this Letter we report kinetic lattice Monte Carlo simulations of vacancy-assisted diffusion in silicon. We show that the observed temperature dependence for vacancy migration energy is explained by the existence of three diffusion regimes for divacancies. This characteristic has been rationalized with an analytical model. In the intermediate temperature regime the divacancy dissociation play...

The Vacancy Concentration and Diffusion in Rare Gas Solids H

Using the two-body Mie, Lennard-Jones potentials derived from solid state properties, the vacancy concentration p. and self-diffusion coefficient D are calculated for the rare gas solids. The results are summarised in Tables l-3. Agreement is obtained with the observed D but not with p.. If the usual interpretation is applied, the agreement of I) suggests the absence of many-body forces whereas...

Acid-Quencher Reaction-Diffusion during the Post-Exposure Bake of Chemically Amplified Resists Part 1: Initially linear concentration profiles

First-principles study of vacancy-assisted impurity diffusion in ZnO

Articles you may be interested in Understanding the presence of vacancy clusters in ZnO from a kinetic perspective Appl. Size effects on formation energies and electronic structures of oxygen and zinc vacancies in ZnO nanowires: A first-principles study